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型号	厂家	描述	日期

NE429M01	California Eastern Laboratories(CEL/NEC)	0.5 GHz to 15 GHz. VDS = 1 V to 3 V. ID = 10 mA to 30 mA. IDSS = 58 mA @ VGS = 0 V. VDS = 2 V	20070107
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=Toshiba:2SK2496 \| RF & MICROWAVE PRODUCT	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=Sharp:LT525A \| RF & MICROWAVE PRODUCT	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=Mitsubishi:MGF4914E \| RF & MICROWAVE PRODUCT	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=Mitsubishi:MGF4314E \| RF & MICROWAVE PRODUCT	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=Fujitsu:FHX06LP/LG \| RF & MICROWAVE PRODUCT	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]Recommended Replacement with NE334S01	20051222
NE429M01	California Eastern Laboratories(CEL/NEC)	C to KU Band Super Low Noise Amplifier N-Channel HJ-FET (151)	20051222
NE428M01/NE429M01	California Eastern Laboratories(CEL/NEC)	[替换型号]=HP/Avantek:ATF-36163 \| RF & MICROWAVE PRODUCT	20051222
NE429M01	NEC	Discrete	20030317
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